- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377522 > IRHNB8260 (International Rectifier) 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRHNB8260 |
| 廠商： | International Rectifier |
| 英文描述： | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| 中文描述： | 200Volt，0.070Ω，N溝道美佳RAD數(shù)據(jù)通信硬的HEXFET（為200V，0.070Ω，美佳抗輻射?溝道的HEXFET晶體管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | IRHNB8260 |
Product Summary
Part Number
IRHNB7260
IRHNB8260
BV
DSS
200V
200V
R
DS(on)
0.070
0.070
I
D
43A
43A
Features:
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNB7260, IRHNB8260
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
43
27
172
300
2.4
±20
500
43
30
5.7
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5 Sec.)
3.5 (typical)
g
N-CHANNEL
MEGA RAD HARD
PD - 91798
Pre-Irradiation
200Volt, 0.070
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irradiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the RAD
HARD process utilizes International Rectifier’s pat-
ented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRHNB7260
IRHNB8260
8/25/98
www.irf.com
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNB7264SE | 250Volt, 0.11Ω, (SEE) RAD HARD HEXFET(250V, 0.11Ω,單事件效應(yīng)抗輻射 HEXFET晶體管) |
| IRHNB7Z60 | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| IRHNB8Z60 | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| IRHNJ54Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNJ53Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNB8Z60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
| IRHNJ3130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ3130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ3130SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ3230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。