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參數(shù)資料
| 型號(hào)： | IRHNB7Z60 |
| 廠商： | International Rectifier |
| 英文描述： | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗輻射N溝道HEXFET晶體管) |
| 中文描述： | 30Volt，0.009Ω，美佳RAD數(shù)據(jù)通信硬的HEXFET（30V的，0.009Ω，美佳抗輻射?溝道的HEXFET晶體管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | IRHNB7Z60 |
Product Summary
Part Number
IRHNB7Z60
IRHNB8Z60
BV
DSS
30V
30V
R
DS(on)
0.009
0.009
I
D
75*A
75*A
Features:
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
IRHNB7Z60, IRHNB8Z60
75*
75*
300
300
2.4
±20
500
75
30
0.35
-55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
V
mJ
A
mJ
V/ns
300 (0.063 in. (1.6mm) from case for 10s)
3.5 (typical)
g
N-CHANNEL
MEGA RAD HARD
PD - 91754
Pre-Irradiation
30Volt, 0.009
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Addi-
tionally, under
identical
pre- and post-irradiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRHNB7Z60
IRHNB8Z60
7/16/98
www.irf.com
1
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