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參數(shù)資料
| 型號： | IRHNJ54Z30 |
| 廠商： | International Rectifier |
| 英文描述： | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| 中文描述： | 30V的N通道表面安裝抗輻射功率MOSFET（30V的，表貼型抗輻射功率?溝道MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 109K |
| 代理商： | IRHNJ54Z30 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
22*
22*
88
75
0.6
±20
155
22
7.5
1.7
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
1.0 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ57Z30
30V, N-CHANNEL
TECHNOLOGY
R
5
4/11/00
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ57Z30 100K Rads (Si) 0.020
IRHNJ53Z30 300K Rads (Si) 0.020
IRHNJ54Z30 600K Rads (Si) 0.020
IRHNJ58Z30 1000K Rads (Si) 0.025
I
D
22A*
22A*
22A*
22A*
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
PD - 93751A
SMD-0.5
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| IRHNJ53Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNJ57Z30 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET) |
| IRHNJ57130 | Surface Mount Radiation Hardened Power MOSFET(表貼型抗輻射功率MOS場效應(yīng)管) |
| IRHNJ57230 | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHNJ63130 | 100V, N-CHANNEL |
相關(guān)代理商/技術(shù)參數(shù) |
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| IRHNJ57130 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 22A 3SMD-0.5 - Rail/Tube |
| IRHNJ57133SE | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 130V 20A 3SMD-0.5 - Rail/Tube |
| IRHNJ57230 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ57230SE | 制造商:International Rectifier 功能描述:N CH MOSFET 200V .22OHM 12A MAX - Rail/Tube |
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