參數(shù)資料
型號: IRHN8150
廠商: International Rectifier
英文描述: TRANSISTOR N-CHANNEL
中文描述: 晶體管N溝道
文件頁數(shù): 7/14頁
文件大?。?/td> 516K
代理商: IRHN8150
Radiation Characteristics
IRHN7150, IRHN8150 Devices
Note: Bias Conditions during radiation; VGS = 12 Vdc, VDS = 0 Vdc
Figure 14. – Typical Output Characteristics Pre-Radiation.
Figure 15. – Typical Output Characteristics, Post-Radiation
100K Rads (Si).
Figure 16. – Typical Output Characteristics, Post-Radiation
300K Rads (Si).
Figure 17. – Typical Output Characteristics, Post-Radiation
1 Mega Rads (Si).
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