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參數(shù)資料
| 型號： | IRHN8150 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL |
| 中文描述： | 晶體管N溝道 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 516K |
| 代理商： | IRHN8150 |
IRHN7150, IRHN8150 Devices
Post-Radiation
Figure 7. – Typical Transient Response of
Rad Hard HEXFET During 1 x 10
12
Rad (Si)/Sec Exposure.
Figure 8a – Gate Stress
of VGSS Equals 12
Volts During Radiation.
Figure 8b – VDSS Stress
Equals 80% of BVDSS
During Radiation.
Figure 9. – High Dose Rate (Gamma Dot)
Test Circuit
Figure 6. – Typical On-State Resistance Vs.
Neutron Fluence Level
Figure 5. – Typical Zero Gate Voltage Drain Current
Vs. Total Dose Exposure.
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