參數(shù)資料
型號： IRHN3150
廠商： International Rectifier
英文描述： RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
中文描述： 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 1）
文件頁數(shù)： 12/12頁
文件大小： 284K
代理商： IRHN3150
12
www.irf.com
IRHN7150, JANSR2N7268U
Pre-Irradiation
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L=0.86mH
Peak IL = 34A, VGS =12V
ISD
≤
34A, di/dt
≤
140A/
μ
s,
VDD
≤
100V, TJ
≤
150
°
C
Foot Notes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 02/01
Case Outline and Dimensions
—
SMD-1
PAD ASSIGNMENTS
相關(guān)PDF資料
PDF描述
IRHN4150 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN7150 Female Disconnect Solderless Terminal; Wire Size (AWG):12-10; Tab Width:0.250"; Insulator Color:Yellow; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
IRHN7450 HEXFET TRANSISTOR
IRHN8450 HEXFET Transistor(HEXFET 晶體管)
IRHN8150 TRANSISTOR N-CHANNEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRHN3230 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHN3250 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHN3450 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHN4054 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHN4130 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*