參數(shù)資料
型號(hào): IRGIB10B60KD1
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述: 絕緣柵雙極型晶體管,超快軟恢復(fù)二極管
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 386K
代理商: IRGIB10B60KD1
IRGIB10B60KD1
6
www.irf.com
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L=1.07mH; V
CE
= 400V
R
G
= 50
; V
GE
= 15V
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L=1.07mH; V
CE
= 400V
R
G
= 50
; V
GE
= 15V
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 150°C; L=1.07mH; V
CE
= 400V
I
CE
= 10A; V
GE
= 15V
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L=1.07mH; V
CE
= 400V
I
CE
= 10A; V
GE
= 15V
0
5
10
15
20
IC (A)
0
100
200
300
400
500
600
700
E
EOFF
EON
0
100
200
300
400
500
RG (
)
0
200
400
600
800
1000
E
EON
EOFF
0
5
10
15
20
IC (A)
1
10
100
1000
S
tR
tdOFF
tF
tdON
0
100
200
300
400
500
RG (
)
10
100
1000
10000
S
tR
tdON
tdOFF
tF
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