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參數(shù)資料
| 型號： | IRGIB10B60KD1 |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 386K |
| 代理商： | IRGIB10B60KD1 |
IRGIB10B60KD1
12
www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
2/04
Package Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982
2 CONTROLLING DIMENSION: INCH.
D
C
A
B
MINIMUM CREEPAGE
DISTANCE BETWEEN
A-B-C-D = 4.80 (.189)
3X
2.85 (.112)
2.65 (.104)
2.80 (.110)
2.60 (.102)
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
3.40 (.133)
3.10 (.123)
- A -
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
3.30 (.130)
3.10 (.122)
- B -
0.90 (.035)
0.70 (.028)
3X
0.25 (.010)
M
A M B
2.54 (.100)
2X
3X
13.70 (.540)
13.50 (.530)
16.00 (.630)
15.80 (.622)
1 2 3
10.60 (.417)
10.40 (.409)
1.40 (.055)
1.05 (.042)
0.48 (.019)
0.44 (.017)
IRFI840G
34 32
924K
EXAMPLE: THIS IS AN IRFI840G
WITH ASSEMBLY
LOT CODE 3432
PART NUMBER
LOGO
RECTIFIER
INTERNATIONAL
ASSEMBLY
LOT CODE
WEEK 24
LINE K
YEAR 9 = 1999
DATE CODE
IN THE ASSEMBLY LINE "K"
ASSEMBLED ON WW 24 1999
TO-220 Full-Pak package is not recommended for Surface Mount Application
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| IRGIB10B60KD1P | 功能描述:IGBT 晶體管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGIB10B60KD1PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGIB15B60KD1 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGIB15B60KD1P | 功能描述:IGBT 晶體管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGIB6B60KD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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