參數(shù)資料
型號(hào)： IRGB4B60K
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 絕緣柵雙極晶體管
文件頁數(shù)： 2/13頁
文件大小： 306K
代理商： IRGB4B60K
IRGB/S/SL4B60K
2
www.irf.com
Note
to
are on page 16
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
3.5
—
—
—
—
—
—
Typ. Max. Units Conditions
—
—
V
0.28
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
2.1
2.5
I
C
= 4.0A, V
GE
= 15V, T
J
= 25°C
2.5
2.8
V
I
C
= 4.0A, V
GE
= 15V, T
J
= 150°C
2.6
2.8
I
C
= 4.0A, V
GE
= 15V, T
J
= 175°C
4.5
5.5
V
V
CE
= V
GE
, I
C
= 250μA
-8.1
—
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
1.7
—
S
V
CE
= 50V, I
C
= 4.0A, PW = 80μs
1.0
150
V
GE
= 0V, V
CE
= 600V
54
300
μA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
300
800
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
—
±100
nA
V
GE
= ±20V
Ref.Fig.
V
GE
= 0V, I
C
= 500μA
5,6,7
V
CE(on)
Collector-to-Emitter Voltage
9,10,11
V
GE(th)
V
GE(th)
/
T
J
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
9,10,11
12
I
CES
Zero Gate Voltage Collector Current
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
Gate-to-Emitter Leakage Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ. Max. Units
12
—
1.7
—
6.5
—
73
80
47
53
120
130
22
28
18
23
100
110
66
80
130
150
83
140
220
280
22
27
18
22
120
130
79
89
190
—
25
—
6.2
—
Conditions
Ref.Fig.
I
C
= 4.0A
V
CC
= 400V
V
GE
= 15V
I
C
= 4.0A, V
CC
= 400V
μJ V
GE
= 15V, R
G
= 100
, L = 2.5mH
T
J
= 25°C
I
C
= 4.0A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 100
, L = 2.5mH
T
J
= 25°C
23
nC
CT1
CT4
CT4
I
C
= 4.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100
, L = 2.5mH
T
J
= 150°C
I
C
= 4.0A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 100
, L = 2.5mH
T
J
= 150°C
CT4
μJ
13,15
WF1,WF2
14,16
CT4
WF1
WF2
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 24A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 100
T
J
= 150°C, Vp = 600V, R
G
= 100
V
CC
=360V,V
GE
= +15V to 0V
pF
22
4
CT2
SCSOA
Short Circuit Safe Operating Area
10
—
—
μs
CT3
WF3
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