參數資料
型號： IRGB4059DPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復DIODEINSULATED柵雙極晶體管與超快軟恢復二極管
文件頁數： 2/10頁
文件大小： 297K
代理商： IRGB4059DPBF
IRGB4059DPbF
2
www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 100 μH, R
G
= 100
.
Pulse width limited by max. junction temperature.
θ
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
4.0
Typ. Max. Units Conditions
—
—
V
0.3
—
V/°C V
GE
= 0V, I
c
= 250 μA ( 25 -175
o
C )
1.75
2.05
I
C
= 4A, V
GE
= 15V, T
J
= 25°C
2.15
—
V
I
C
= 4A, V
GE
= 15V, T
J
= 150°C
2.20
—
I
C
= 4A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 100 μA
-18
—
mV/°C V
CE
= V
GE
, I
C
= 250 μA ( 25 -175
o
C )
2.0
—
S
V
CE
= 50V, I
C
= 4A, PW =80
μ
s
1
25
μA
V
GE
= 0V,V
CE
= 600V
280
—
μA
V
GE
= 0v, V
CE
= 600V, T
J
=175°C
1.60
2.30
V
I
F
= 4A
1.30
—
I
F
= 4A, T
J
= 175°C
—
±100
nA
V
GE
= ± 20 V
Ref.Fig
V
GE
= 0V,I
c
=100 μA
V
CE(on)
Collector-to-Emitter Saturation Voltage
5,6,7,9,
10 ,11
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
—
—
—
—
—
—
—
8
V
FM
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
9
13
2
3
4
6
35
77
75
118
110
196
25
33
10
14
65
75
15
20
Ref.Fig
I
C
= 4A
V
CC
= 400V
V
GE
= 15V
I
C
= 4A, V
CC
= 400V, V
GE
= 15V
R
G
= 100
, L=1mH, L
S
= 150nH, T
J
= 25°C
24
nC
CT1
μJ
CT4
Energy losses include tail and diode reverse recovery
I
C
= 4A, V
CC
= 400V
ns
R
G
= 100
, L=1mH, L
S
= 150nH
T
J
= 25°C
CT4
90
120
210
20
15
85
35
—
—
—
—
—
—
—
—
—
—
I
C
= 4A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 100
, L=1mH, L
S
= 150nH, T
J
= 175°C
13,15
CT4
Energy losses include tail and diode reverse recovery
I
C
= 4A, V
CC
= 400V
ns
R
G
= 100
, L=1mH, L
S
= 150nH
T
J
= 175°C
WF1,WF2
14,16
CT4
WF1,WF2
240
25
10
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
T
J
= 175°C, I
C
= 16A
V
CC
= 480V, Vp =600V
Rg = 100
, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
R
G
= 100
, V
GE
= +15V to 0V
T
J
= 175
o
C
V
CC
= 400V, I
F
= 4A
V
GE
= 15V, Rg = 100
, L=1mH, L
S
=150nH
22
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
22, CT3
WF4
Erec
Reverse recovery energy of the diode
Diode Reverse recovery time
145
55
μJ
ns
17,18,19
trr
Irr
20,21
Peak Reverse Recovery Current
11
A
WF3
Diode Forward Voltage Drop
Collector-to-Emitter Leakage Current
SCSOA
Short Circuir Safe Operating Area
5
μs
pF
CT6
9,10,11,12
Conditions
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