參數(shù)資料
型號(hào): IRFPS40N60K
廠商: International Rectifier
元件分類: 功率晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù): 6/8頁
文件大?。?/td> 140K
代理商: IRFPS40N60K
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13a.
Gate Charge Test Circuit
Fig 13b.
Basic Gate Charge Waveform
Fig 12a.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12c.
Unclamped Inductive Waveforms
Fig 12b.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 14.
Threshold Voltage Vs. Temperature
25
50
75
100
125
150
0
240
480
720
960
1200
Starting Tj, Junction Temperature
( C)
E
A
ID
17A
24A
38A
TOP
BOTTOM
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( °C )
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VG
ID = 250μA
相關(guān)PDF資料
PDF描述
IRFPS59N60C SMPS MOSFET
IRFR1010Z AUTOMOTIVE MOSFET
IRFU1010Z AUTOMOTIVE MOSFET
IRFR120 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs
IRFR120 HEXFET POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFPS40N60KPBF 功能描述:MOSFET N-Chan 600V 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFPS43N50 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A)
IRFPS43N50K 功能描述:MOSFET N-Chan 500V 47 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFPS43N50KPBF 功能描述:MOSFET N-Chan 500V 47 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFPS59N60C 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET