參數(shù)資料
型號： IRFPS40N60K
廠商： International Rectifier
元件分類： 功率晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù)： 2/8頁
文件大小： 140K
代理商： IRFPS40N60K
2
www.irf.com
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Diode Characteristics
Symbol
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
21
–––
–––
–––
–––
–––
–––
–––
–––
47
–––
110
–––
97
–––
60
–––
7970 –––
–––
750
–––
75
–––
9440 –––
–––
200
–––
260
Conditions
V
DS
= 50V, I
D
= 24A
I
D
= 38A
V
DS
= 480V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 300V
I
D
= 38A
R
G
= 4.3
V
GS
= 10V,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
330
84
150
–––
–––
–––
–––
S
nC
–––
–––
pF
–––
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
600
–––
–––
0.63
–––
0.110 0.130
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 24A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
5.0
50
250
100
-100
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.(See Fig. 11)
Starting T
J
= 25°C, L = 0.84mH, R
G
= 25
,
I
AS
= 38A, (See Figure 12a)
I
SD
≤
38A, di/dt
≤
224A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
S
D
G
Parameter
Min. Typ. Max. Units
–––
–––
Conditions
40
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 38A, V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
–––
–––
160
–––
–––
–––
–––
–––
–––
–––
630
730
14
17
39
1.5
950
1090
20
25
58
V
I
F
= 38A
di/dt = 100A/μs
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
μC
θ
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