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參數(shù)資料
| 型號： | IRFPS59N60C |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的開關(guān)電源 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 68K |
| 代理商： | IRFPS59N60C |
IRFPS59N60C
HEXFET
Power MOSFET
11/2/99
www.irf.com
1
Parameter
Max.
59
37
240
390
3.1
± 20
TBD
Units
I
D
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-40 to + 150
-55 to + 150
300 (1.6mm from case )
20
N
SMPS MOSFET
Absolute Maximum Ratings
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg Reduces Drive
Required
l
Improved Gate Resistance for Faster
Switching
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Lowest Conduction Loss in Package
Outline
l
Effective C
OSS
specified (See AN 1001)
Applications
V
DSS
600V
R
DS(on)
max
0.045
I
D
59A
Applicable Off Line SMPS Topologies:
l
Power Factor Correction Boost
l
Full Bridge
PD - 90380
Super
-
247
PROVISIONAL
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