參數(shù)資料
型號: IRFPS3810
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 100V的,的Rds(on)\u003d 0.009ohm,身份證\u003d 170A章)
文件頁數(shù): 4/8頁
文件大小: 124K
代理商: IRFPS3810
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
100
200
300
400
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
100A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
1
10
100
VDS, Drain-to-Source Voltage (V)
0
5000
10000
C
15000
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
ID
Tc = 25
°
C
Tj = 175
°
C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
10
100
1000
0.2
0.8
1.4
2.0
2.6
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 175 C
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