參數(shù)資料
型號： IRFPS3810
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.009ohm，身份證\u003d 170A章）
文件頁數(shù)： 2/8頁
文件大小： 124K
代理商： IRFPS3810
2
www.irf.com
Parameter
Min. Typ. Max. Units
100
–––
–––
0.11
–––
–––
0.009
3.0
–––
52
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
260
–––
49
–––
160
–––
24
–––
270
–––
45
–––
140
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 100A
V
DS
= 10V, I
D
= 250μA
V
DS
= 50V, I
D
= 100A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 30V
V
GS
= -30V
I
D
= 100A
V
DS
= 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 100A
R
G
= 1.03
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 80V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
V
V/
°
C
V
S
5.0
–––
25
250
100
-100
390
74
250
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
10740
–––
–––
1180
–––
–––
2210
–––
6790
–––
2470
–––
990
pF
–––
nH
Electrical Characteristics @ T
J
= 25
°
C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
≤
100A, di/dt
≤
350A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Starting T
J
= 25
°
C, L = 0.27mH
R
G
= 25
, I
AS
= 100A. (See Figure 12)
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 100A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 100A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
1640 2460
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
220
1.3
330
V
ns
nC
Source-Drain Ratings and Characteristics
170
670
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