參數(shù)資料
型號: IRFP9150
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
中文描述: 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù): 4/7頁
文件大?。?/td> 59K
代理商: IRFP9150
4-66
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
V
DS
, DRAIN VOLTAGE (V)
100
10
11
10
100
IRFP9150,1
IRFP9150,1
IRFP9151
DC
1s
0.1s
100ms
10ms
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
IRFP9150
200
-100
-80
-60
-40
-20
0
I
D
,
-10
(V
DS
), DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-50
V
GS
= 12V
V
GS
= 10V
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 14V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
-40
-30
-20
-10
I
D
,
0
-1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-2
-3
-4
-5
0
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
-50
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
-100
-10
-1
-0.10
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
I
D
-10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
-50V
350
250
200
100
50
r
D
0
-20
-40
-60
-80
-100
I
D
, DRAIN CURRENT (A)
150
300
O
V
GS
= 10V
V
GS
= 20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.2
1.8
1.4
1.0
0.6
0.2
N
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= -10A
IRFP9150
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