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參數(shù)資料
| 型號(hào)： | IRFP9150 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET |
| 中文描述： | 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | IRFP9150 |
4-65
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
-
-
-25
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-100
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -25A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= -25A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= -25A, dI
SD
/dt = 100A/
μ
s
-
-0.9
-1.5
V
Reverse Recovery Time
t
rr
-
150
300
ns
Reverse Recovered Charge
Q
RR
0.3
0.7
1.5
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3
4. V
DD
= 25V, start T
J
= 25
o
C, L = 3.2mH, R
G
= 25
,
peak I
AS
= 25A (Figures 15, 16).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
-30
-25
-20
-10
0
I
D
,
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
-15
-5
10
1
0.10
N
0.01
10
-5
10
-4
10
-2
1
t
1
, SQUARE WAVE PULSE DURATION (s)
10
-3
10
-1
T
10
NOTES:
DUTY FACTOR: D = t
1
/t
2
T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
P
DM
DUTY CYCLE IN DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
IRFP9150
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| IRFP9231 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
| IRFP9232 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
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