參數(shù)資料
型號： IRFP460P
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）\u003d 0.27ohm，身份證\u003d 20A條）
文件頁數(shù)： 2/8頁
文件大小： 174K
代理商： IRFP460P
2
www.irf.com
IRFP460P
Parameter
Min. Typ. Max. Units
500
–––
–––
0.63
–––
–––
2.0
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
–––
59
–––
110
–––
58
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
=12A
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 20V
V
GS
=-20V
I
D
= 20A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 20A
R
G
= 4.3
R
D
= 13
,See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.27
4.0
–––
25
250
100
-100
210
29
110
–––
–––
–––
–––
V
V/
°
C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4200
–––
870
350
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
20A, di/dt
≤
160A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25
°
C, L =4.8mH
R
G
= 25
, I
AS
= 20A. (See Figure 12)
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 20A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 20A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoverCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
570
5.7
1.8
860
8.6
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
20
80
A
相關(guān)PDF資料
PDF描述
IRFP460 N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.27Ω的N溝道增強型MegaMOS功率MOSFET)
IRFP4710 Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A)
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