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參數(shù)資料
| 型號： | IRFI540N |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.052ohm，身份證\u003d 20A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 131K |
| 代理商： | IRFI540N |
HEXFET
Power MOSFET
IRFI540N
PD - 9.1361A
3/16/98
V
DSS
= 100V
R
DS(on)
= 0.052
I
D
= 20A
S
D
G
TO-220 FULLPAK
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Parameter
Min.
––––
––––
Typ.
––––
––––
Max.
2.8
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Thermal Resistance
Parameter
Max.
20
14
110
54
0.36
±20
300
16
5.4
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
PRELIMINARY
°C/W
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