參數(shù)資料
型號: IRFF120
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET(6.0A, 100V , 0.300 Ohm, N溝道增強(qiáng)型功率MOS場效應(yīng)管)
中文描述: 6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 5/7頁
文件大?。?/td> 325K
代理商: IRFF120
5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.25
1.05
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
120
1.15
80
I
D
= 250
μ
A
1000
200
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
C
600
800
400
C
RSS
30
40
50
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
C
ISS
C
OSS
I
D
, DRAIN CURRENT (A)
g
f
,
0
0
4
8
12
16
1
2
3
4
5
20
125
o
C
25
o
C
-55
o
C
80
μ
s PULSE TEST
0
2
3
1
10
100
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
150
o
C
25
o
C
2
5
2
5
1.0
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
G
,
0
0
4
8
12
16
5
10
15
20
V
DS
= 20V
V
DS
= 50V
20
V
DS
= 80V
I
D
= 6A
IRFF120
相關(guān)PDF資料
PDF描述
IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
IRFF130 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
IRFF210 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
IRFF230 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
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IRFF121R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
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