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參數(shù)資料
| 型號： | IRFF120 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| 中文描述： | 重復(fù)性雪崩和DV /受好評的HEXFET三極管通孔dt（下至205AF） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 131K |
| 代理商： | IRFF120 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
6.0
3.5
24
20
0.16
±20
76
—
—
5.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
PD - 90426C
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
o
C
A
01/22/01
www.irf.com
1
TO-39
Product Summary
Part Number BVDSS R
DS(on)
IRFF120 100V 0.30
6.0A
I
D
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
For footnotes refer to the last page
IRFF120
JANTX2N6788
JANTXV2N6788
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-205AF)
TRANSISTORS
REF:MIL-PRF-19500/555
100V, N-CHANNEL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| IRFF210 | 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
| IRFF210 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF) |
| IRFF230 | 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET |
| IRFF310 | 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET(1.35A, 400V, 3.600 Ω, N溝道功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF120R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF |
| IRFF121 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF |
| IRFF1210 | 制造商:International Rectifier 功能描述: |
| IRFF121R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF |
| IRFF122 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF |
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