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參數(shù)資料
| 型號： | IRFF120 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET(6.0A, 100V , 0.300 Ohm, N溝道增強型功率MOS場效應(yīng)管) |
| 中文描述： | 6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 325K |
| 代理商： | IRFF120 |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.0
10.0
100.0
200.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50.0
10.0
1.0
0.1
I
D
,
100
μ
s
1ms
10
μ
s
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
T
J
= MAX RATED
10ms
100ms
DC
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
20
16
12
8
4
0
I
D
,
80
μ
s PULSE TEST
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 8V
V
GS
= 9V
V
GS
= 10V
0
2
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
5
4
6
I
D
,
8
4
10
80
μ
s PULSE TEST
V
GS
= 9V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0
4
12
I
D
,
20
8
16
4
8
10
-55
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
80
μ
s PULSE TEST
25
o
C
125
o
C
0
0.4
0.6
0.8
10
20
30
40
r
D
,
I
D
, DRAIN CURRENT (A)
0
0.2
V
GS
= 10V
V
GS
= 20V
O
)
2
μ
s PULSE TEST
2.50
1.50
1.00
0.50
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
120
2.00
80
V
GS
= 10V
I
D
= 3A
IRFF120
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFF120 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| IRFF210 | 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
| IRFF210 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF) |
| IRFF230 | 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF120R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF |
| IRFF121 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF |
| IRFF1210 | 制造商:International Rectifier 功能描述: |
| IRFF121R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF |
| IRFF122 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF |
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