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參數(shù)資料
| 型號(hào)： | irfe430 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTOR |
| 中文描述： | 的HEXFET晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 129K |
| 代理商： | IRFE430 |
4
www.irf.com
IRFE430, JANTX-, JANTXV-, 2N6802U Device
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4
0.6
0.8
1.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
0.1
1
10
100
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
1
10
100
0
400
800
1200
1600
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
0
5
10
15
20
25
30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
2.5A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
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