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參數(shù)資料
| 型號(hào)： | IRFBA1405P |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 5.0mohm，身份證\u003d 174A章） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 238K |
| 代理商： | IRFBA1405P |
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 5.0m
I
D
= 174A
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175
o
C junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220
TM
is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220
TM
package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Absolute Maximum Ratings
3/1/01
www.irf.com
1
G
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
G
G
G
Benefits
AUTOMOTIVE MOSFET
IRFBA1405P
Typical Applications
Electric Power Steering (EPS)
Anti-lock Braking System (ABS)
Wiper Control
Climate Control
Power Door
G
G
G
G
Super
-
220
Parameter
Max.
174
123
680
330
2.2
± 20
560
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
N
°C
PD -94111
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參數(shù)描述 |
|---|---|
| IRFBA1405PPBF | 功能描述:MOSFET MOSFT 55V 174A 5mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBA1405PPBF-ND | 制造商: 功能描述: 制造商:undefined 功能描述: |
| IRFBA22N50 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A) |
| IRFBA22N50A | 功能描述:MOSFET N-Chan 500V 24 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBA22N50APBF | 功能描述:MOSFET N-Chan 500V 24 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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