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參數(shù)資料
| 型號(hào)： | IRFBL18N50K |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(SMPS)(HEXFET 功率MOS場(chǎng)效應(yīng)管(用于開關(guān)模式電源)) |
| 中文描述： | HEXFET功率MOSFET（開關(guān)電源）（馬鞍山的HEXFET功率場(chǎng)效應(yīng)管（用于開關(guān)模式電源）） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 29K |
| 代理商： | IRFBL18N50K |
IRFBL18N50K
6/2/00
www.irf.com
1
PD- 93928
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
500V
R
DS(on)
0.25
I
D
18A
Parameter
Max.
18
11
72
200
1.6
± 30
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
260
°
C
Absolute Maximum Ratings
PROVISIONAL
Telecom and Data-Com off-Line SMPS
UninterruptIble Power Supply
Benefits
Low On-Resistance
High Speed Switching
Low Gate Drive Current Due to Improved
Gate Charge Characteristics
Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
Applications
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 18A, V
GS
= 0V
T
J
= 125
°
C, I
F
= 18A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
540
5.0
1.5
–––
–––
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
Diode Characteristics
18
72
A
Typical SMPS Topologies
Hard Switching Full and Half Bridge Circuits
Hard Switching Single Transistor Circuits
Power Factor Correction Circuits
Super D
2
pak
TM
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