參數(shù)資料
型號： IRFB20N50K
廠商： International Rectifier
英文描述： SMPS MOSFET
中文描述： MOSFET的開關(guān)電源
文件頁數(shù)： 2/8頁
文件大?。?/td> 115K
代理商： IRFB20N50K
2
www.irf.com
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
g
fs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–––
–––
0.61
–––
0.21 0.25
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
V
V/
°
C
V
μA
μA
5.0
50
250
100
-100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Static @ T
J
= 25
°
C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25
°
C, L = 1.6mH, R
G
= 25
,
I
AS
= 20A,
I
SD
≤
20A, di/dt
≤
350A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Pulse width
≤
400μs; duty cycle
≤
2%.
Min. Typ. Max. Units
11
–––
–––
–––
–––
–––
–––
–––
–––
22
–––
74
–––
45
–––
33
–––
2870
–––
–––
320
–––
34
–––
3480
–––
–––
85
–––
160
Conditions
V
DS
= 50V, I
D
= 12A
I
D
= 20A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 20A
R
G
= 7.5
V
GS
= 10V,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 400V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
–––
110
33
54
–––
–––
–––
–––
S
nC
–––
–––
pF
–––
–––
ns
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 20A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 20A
di/dt = 100A/μs
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
520
5.3
1.5
780
8.0
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
Diode Characteristics
20
80
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