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參數(shù)資料
| 型號： | IRF9956 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=30V, Rds(on)=0.10ohm) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 0.10ohm） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 107K |
| 代理商： | IRF9956 |
IRF9956
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.25A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.25A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
0.82
27
28
1.2
53
57
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
16
1.7
A
S
D
G
Surface mounted on FR-4 board, t
≤
10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
2.0A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 22mH
R
G
= 25
, I
AS
= 2.0A.
Parameter
Min. Typ. Max. Units
30
–––
––– 0.015 –––
–––
0.06
–––
0.09
1.0
–––
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.9
–––
1.0
–––
1.8
–––
6.2
–––
8.8
–––
13
–––
3.0
–––
190
–––
120
–––
61
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 2.2A
V
GS
= 4.5V, I
D
= 1.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 15V, I
D
= 3.5A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 24V
V
GS
= -24V
I
D
= 1.8A
V
DS
= 10V
V
GS
= 10V, See Fig. 10
V
DD
= 10V
I
D
= 1.0A
R
G
= 6.0
R
D
= 10
V
GS
= 0V
V
DS
= 15V
= 1.0MHz, See Fig. 9
V/°C
0.10
0.20
–––
–––
2.0
25
100
-100
14
2.0
3.5
12
18
26
6.0
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
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