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參數(shù)資料
IRF7503
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N OTE S:
1. OU TL IN E CON FORM S TO EIA -481 & EIA -541.
2. C ONTROLLING DIM E NSION : M IL LIM E TE R.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7504 | Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm) |
| IRF7506 | Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm) |
| IRF7507PBF | HEXFET㈢Power MOSFET |
| IRF7507 | Power MOSFET(Vdss=+-20V) |
| IRF7700 | Power MOSFET(Vdss=-20V) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7503PBF | 制造商:International Rectifier 功能描述:MOSFET DUAL NN MICRO-8 制造商:International Rectifier 功能描述:MOSFET, DUAL, NN, MICRO-8 制造商:International Rectifier 功能描述:MOSFET, DUAL, NN, MICRO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:8 ;RoHS Compliant: Yes |
| IRF7503TR | 功能描述:MOSFET 2N-CH 30V 2.4A MICRO8 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7503TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 30V 2.4A Micro 8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7503TRPBF-EL | 制造商:International Rectifier 功能描述: |
| IRF7504 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm) |
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