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參數(shù)資料
| 型號： | IRF7503 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=30V, Rds(on)=0.135ohm) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 0.135ohm） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | IRF7503 |
IRF7503
Parameter
Min. Typ. Max. Units
30
–––
––– 0.059 –––
–––
––– 0.135
–––
––– 0.222
1.0
–––
1.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.8
–––
1.2
–––
2.5
–––
4.7
–––
10
–––
12
–––
5.3
–––
210
–––
80
–––
32
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 1.7A
V
GS
= 4.5V, I
D
= 0.85A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 0.85A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= 1.7A
V
DS
= 24V
V
GS
= 10V, See Fig. 6 and 9
V
DD
= 15V
I
D
= 1.7A
R
G
= 6.1
R
D
= 8.7
,
See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
1.0
25
-100
100
12
1.8
3.8
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
nC
pF
μA
nA
ns
I
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300μs; duty cycle
≤
2%.
I
SD
≤
1.7A, di/dt
≤
120A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
40
48
1.2
60
72
V
ns
nC
Source-Drain Ratings and Characteristics
A
–––
–––
14
–––
–––
1.25
S
D
G
Surface mounted on FR-4 board, t
≤
10sec.
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