參數資料
型號: IRF7319
廠商: International Rectifier
英文描述: HEXFET?? Power MOSFET
中文描述: 的HEXFET??功率MOSFET
文件頁數: 3/10頁
文件大小: 137K
代理商: IRF7319
IRF7319
Fig 3.
Typical Transfer Characteristics
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
N-Channel
1
10
100
0.1
1
10
20μs PULSE WIDTH
T = 25°C
A
V DS
3.0V
VGS
D
I
1
10
100
0.1
1
10
A
VDS
D
I
20μs PULSE WIDTH
T = 150°C
3.0V
VGS
1
10
100
3.0
3.5
4.0
4.5
5.0
T = 25°C
T = 150°C
V , Gate-to-Source Voltage (V)
D
I
A
V = 10V
20μs PULSE WIDTH
1
10
100
0.4
0.6
V , Source-to-Drain Voltage (V)
0.8
1.0
1.2
1.4
1.6
T = 25°C
T = 150°C
V = 0V
I
S
A
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相關代理商/技術參數
參數描述
IRF7319HR 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC
IRF7319PBF 功能描述:MOSFET 20V DUAL N-CH HEXFET 58mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7319TR 制造商:International Rectifier 功能描述:MOSFET, DUAL N/P-CHANNEL, 30V, 6.5A, SO-8
IRF7319TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC T/R
IRF7319TRPBF 功能描述:MOSFET MOSFT DUAL N/PCh 30V 6.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube