參數(shù)資料
型號(hào)： IRF7324D1
廠商： International Rectifier
英文描述： FETKY MOSFET / Schottky Diode
中文描述： FETKY MOSFET的/肖特基二極管
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 164K
代理商： IRF7324D1
www.irf.com
1
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Maximum
-2.9
-2.3
-23
2.0
1.3
16
± 12
-5.0
-55 to +150
Units
A
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Thermal Resistance Ratings
IRF7324D1
PRELIMINARY
PD- 91789
FETKY
MOSFET / Schottky Diode
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
SD
≤
-2.2A, di/dt
≤
-50A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤
10sec.
Parameter
R
θ
JA
Maximum
62.5
Units
°C/W
Junction-to-Ambient
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
The
FETKY
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
family of co-packaged HEXFETs and Schottky diodes offer
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Description
V
DSS
= -20V
R
DS(on)
= 0.18
Schottky Vf = 0.39V
SO-8
TM
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
l
Co-packaged HEXFET
Power
MOSFET and Schottky Diode
l
Ideal for Mobile Phone Applications
l
Generation V Technology
l
SO-8 Footprint
相關(guān)PDF資料
PDF描述
IRF7324D1TR FETKY MOSFET / Schottky Diode
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IRF7328 HEXFET Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7324D1PBF 功能描述:MOSFET 20V FETKY 12 VGS 270 RDS 2.7VmOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7324D1TR 功能描述:MOSFET P-CH 20V 2.2A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF7324D1TRPBF 功能描述:MOSFET MOSFT PCh w/Schttky -2.2A 270mOhm 5.2nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7324PBF 功能描述:MOSFET DUAL -20V P-CH 12 VGS MAX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7324TR 制造商:International Rectifier 功能描述:Dual P-Channel 20 V 2 W 42 nC Hexfet Power Mosfet Surface Mount - SOIC-8
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