參數(shù)資料
型號(hào): IRF7309
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 6/8頁
文件大?。?/td> 162K
代理商: IRF7309
152
IRF7309
P-Channel
Fig 14.
Typical Transfer Characteristics
Fig 15.
Normalized On-Resistance
Vs. Temperature
Fig 16.
Typical Capacitance Vs. Drain-to-
Source Voltage
Fig 17.
Typical Gate Charge Vs. Gate-to-
Source Voltage
0
200
400
600
800
1000
1
10
100
C
A
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
1
10
100
4
5
6
7
8
9
10
T = 25°C
T = 150°C
D
A
-
-V , Gate-to-Source Voltage (V)
V = -15V
20μs PULSE WIDTH
0.0
0.5
1.0
1.5
2.0
-60
-40
-20
T , Junction Temperature (°C)
0
20
40
60
80
100 120 140 160
R
D
(
A
V = -10V
I = -3.0A
0
4
8
12
16
20
0
5
Q , Total Gate Charge (nC)
10
15
20
25
A
-
G
I = -3.0A
V = -24V
FOR TEST CIRCUIT
SEE FIGURE 22
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