參數(shù)資料
型號(hào)： IRF7309
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 162K
代理商： IRF7309
148
IRF7309
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
V/°C
V
S
μA
nC
ns
nH
pF
N-Channel
I
D
= 2.6A, V
DS
= 16V, V
GS
= 4.5V
P-Channel
I
D
= -2.2A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 2.6A, R
G
= 6.0
,
R
D
= 3.8
P-Channel
V
DD
= -10V, I
D
= -2.2A, R
G
= 6.0
,
R
D
= 4.5
Between lead tip
and center of die contact
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
N-Ch
P-Ch
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
t
on
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
= 25°C, I
F
= 2.6A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -2.2A, di/dt = 100A/μs
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
Parameter
Min. Typ. Max. Units
30
—
P-Ch -30
—
N-Ch
— 0.032 —
P-Ch
— -0.037 —
—
— 0.050
—
— 0.080
—
—
—
—
N-Ch 1.0
—
P-Ch -1.0
—
N-Ch 5.2
—
P-Ch 2.5
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
6.8
P-Ch
—
11
N-Ch
—
21
P-Ch
—
17
N-Ch
—
22
P-Ch
—
25
N-Ch
—
7.7
P-Ch
—
18
N-P
—
4.0
N-P
—
6.0
N-Ch
—
520
P-Ch
—
440
N-Ch
—
180
P-Ch
—
200
N-Ch
—
72
P-Ch
—
93
Conditions
N-Ch
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 2.4A
V
GS
= 4.5V, I
D
= 2.0A
V
GS
= -10V, I
D
= -1.8A
V
GS
= -4.5V, I
D
= -1.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 15V, I
D
= 2.4A
V
DS
= -24V, I
D
= -1.8A
V
DS
= 24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= ± 20V
0.10
0.16
—
—
—
—
1.0
-1.0
25
-25
±100
25
25
2.9
2.9
7.9
9.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
GSS
Gate-to-Source Forward Leakage
L
D
L
S
Internal Drain Inductace
Internal Source Inductance
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
47
—
53
—
56
—
66
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
1.8
-1.8
16
-12
1.0
-1.0
71
80
84
99
T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
Forward Turn-On Time
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel I
SD
≤
2.4A, di/dt
≤
73A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-1.8A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
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