參數(shù)資料
型號(hào)： IRF7306
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 113K
代理商： IRF7306
IRF7306
Parameter
Min. Typ. Max. Units
-30
–––
––– -0.037 –––
–––
–––
–––
–––
-1.0
–––
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
–––
17
–––
25
–––
18
Conditions
V
GS
= 0V, ID = -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -1.8A
V
GS
= -4.5V, I
D
= -1.5A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -24V, I
D
= -1.8A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -1.8A
V
DS
= -24V
V
GS
= -10V, See Fig. 6 and 12
V
DD
= -15V
I
D
= -1.8A
R
G
= 6.0
R
D
= 8.2
,
See Fig. 10
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
0.10
0.16
–––
–––
-1.0
-25
-100
100
25
2.9
9.0
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
Between lead tip
and center of die contact
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
440
200
93
–––
–––
–––
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
pF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.8A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
53
66
-1.0
80
99
V
ns
μC
I
SD
≤
-1.8A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
–––
–––
-14
–––
–––
-2.5
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
–––
6.0
–––
L
D
Internal Drain Inductance
–––
4.0
–––
nH
ns
nA
μA
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
S
D
G
Surface mounted on FR-4 board, t
≤
10sec.
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