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參數(shù)資料
| 型號： | IRF630M |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET |
| 中文描述： | N溝道200伏- 0.35W - 9A條TO-220/TO-220FP MOSFET的網(wǎng)格密胺 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 343K |
| 代理商： | IRF630M |
1/9
October 2001
IRF630M
IRF630MFP
N-CHANNEL 200V - 0.35
- 9A TO-220/TO-220FP
MESH OVERLAY MOSFET
I
TYPICAL R
DS
(on) = 0.35
I
EXTREMELY HIGH dv/dt CAPABILITY
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the compa-
ny’s consolidated strip layout-based MESH OVER-
LAY process. This technology matches and
improves the performances compared with standard
parts from various sources.
Isolated TO-220 option simplifies assembly and cuts
risk of accidental short circuit in crowded monitor
PCB’s.
.APPLICATIONS
I
MONITOR DISPLAYS
I
GENERAL PURPOSE SWITCH
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
IRF630M
200 V
< 0.40
9 A
IRF630FPM
200 V
< 0.40
9 A
Parameter
Value
Unit
IRF630M
IRF630MFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
200
V
200
V
Gate- source Voltage
± 20
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
9
9 (**)
A
5.7
5.7 (**)
A
Drain Current (pulsed)
36
36
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
75
30
W
0.6
5
0.24
5
W/°C
V/ns
dv/dt (1)
V
ISO
T
stg
T
j
Insulation Winthstand Voltage (DC)
--
2500
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(1)I
SD
≤
9A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(**) Limited only by Maximum Temperature Allowed
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
1
2
3
TO-220FP
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| IRF630MFP | N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET |
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| IRF630ST4 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-263AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF630M_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 200V - 0.35ヘ - 9A - TO-220 /TO-220FP Mesh Overlay⑩ Power MOSFET |
| IRF630MFP | 制造商:ST 功能描述:N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFET |
| IRF630N | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET N TO-220 |
| IRF630N_04 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF630N_R4942 | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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