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參數(shù)資料
| 型號(hào)： | IRF540, |
| 廠商： | Intersil Corporation |
| 英文描述： | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 第28A，100V的，0.077 Ohm的N通道PowerMOSFET（第28A，100V的，0.077 Ohm的N溝道增強(qiáng)型功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | IRF540, |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
100
10
300
300
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
0
12
24
36
48
10
20
30
40
50
60
V
GS
= 7V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
10
0
1
2
3
5
20
30
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
V
GS
= 10V
40
4
V
GS
= 4V
V
GS
= 7V
V
GS
= 5V
50
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
4
6
8
10
2
0.1
1
10
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
25
o
C
175
o
C
V
DS
≥
50V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.4
0.6
0.8
25
50
75
100
r
D
,
I
D
, DRAIN CURRENT (A)
125
1.0
0
0.2
V
GS
= 10V
V
GS
= 20V
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-60
-40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
100 120 140 160 180
2.4
80
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 28A
IRF540, RF1S540SM
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相關(guān)代理商/技術(shù)參數(shù) |
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| IRF540,127 | 功能描述:MOSFET RAIL IR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF540/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement-Mode Silicon Gate |
| IRF540_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.055ヘ - 22A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| IRF540_R4941 | 功能描述:MOSFET USE 512-IRF540A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF540837D | 制造商:MITSUBISHI 功能描述:NEW |
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