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參數(shù)資料
| 型號： | IRF540, |
| 廠商： | Intersil Corporation |
| 英文描述： | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 第28A，100V的，0.077 Ohm的N通道PowerMOSFET（第28A，100V的，0.077 Ohm的N溝道增強(qiáng)型功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 75K |
| 代理商： | IRF540, |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
28
A
Pulse Source to Drain Current
(Note 3)
-
-
110
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 27A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 28A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 28A, dI
SD
/dt = 100A/
μ
s
-
-
2.5
V
Reverse Recovery Time
70
150
300
ns
μ
C
Reverse Recovery Charge
0.2
1.0
1.9
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 440
μ
H, R
G
= 25
, peak I
AS
= 28A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
12
6
0
25
50
75
100
125
150
24
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
30
175
18
t
1
, RECTANGULAR PULSE DURATION (s)
10
Z
θ
J
T
10
-3
10
-2
10
-1
1
1
10
-5
10
-4
10
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.01
0.2
0.5
0.05
SINGLE PULSE
T
o
C
IRF540, RF1S540SM
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| IRF540,127 | 功能描述:MOSFET RAIL IR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IRF540_R4941 | 功能描述:MOSFET USE 512-IRF540A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF540837D | 制造商:MITSUBISHI 功能描述:NEW |
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