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參數(shù)資料
| 型號： | IGW40T120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss IGBT in Trench and Fieldstop technology |
| 中文描述： | 在戴低損失和場終止IGBT技術(shù) |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 419K |
| 代理商： | IGW40T120 |
IGW40T120
^
TrenchStop Series
Power Semiconductors
7
Preliminary / Rev. 1 Jul-02
E
,
S
10A
20A
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
R
G
=15
,
Dynamic test circuit in Figure E)
30A
40A
50A
60A
70A
0,0mJ
5,0mJ
10,0mJ
15,0mJ
20,0mJ
25,0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
E
,
S
5
15
25
35
0 mJ
5 mJ
10 mJ
15 mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
R
G
,
GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
I
C
=40A,
Dynamic test circuit in Figure E)
E
,
S
50°C
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=40A,
R
G
=15
,
Dynamic test circuit in Figure E)
100°C
150°C
0mJ
5mJ
10mJ
15mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
400V
500V
600V
700V
800V
0mJ
5mJ
10mJ
15mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
=150°C,
V
GE
=0/15V,
I
C
=40A,
R
G
=15
,
Dynamic test circuit in Figure E)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IGW40T120_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in TrenchStop and Fieldstop technology |
| IGW40T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 75A 270W TO247-3 |
| IGW50N60H3 | 功能描述:IGBT 晶體管 600V 50A 333W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IGW50N60H3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 100A 333W TO247-3 |
| IGW50N60H3XK | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube |
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