參數(shù)資料
型號: IGW40T120
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss IGBT in Trench and Fieldstop technology
中文描述: 在戴低損失和場終止IGBT技術(shù)
文件頁數(shù): 4/12頁
文件大小: 419K
代理商: IGW40T120
IGW40T120
^
TrenchStop Series
Power Semiconductors
4
Preliminary / Rev. 1 Jul-02
I
C
,
C
10Hz
100Hz
1kHz
10kHz
100kHz
0A
20A
40A
60A
80A
100A
T
C
=110°C
T
C
=80°C
I
C
,
C
1V
10V
100V
1000V
0,1A
1A
10A
100A
DC
10μs
t
p
=3μs
50μs
500μs
20ms
150μs
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
150
°
C;
V
GE
=15V)
Figure 1. Collector current as a function of
switching frequency
(
T
j
150
°
C,
D =
0.5,
V
CE
= 600V,
V
GE
= 0/+15V,
R
G
= 15
)
P
t
,
P
25°C
50°C
75°C
100°C
125°C
0W
50W
100W
150W
200W
250W
I
C
,
C
25°C
75°C
125°C
0A
10A
20A
30A
40A
50A
60A
70A
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(
T
j
150
°
C)
Figure 4. Collector current as a function of
case temperature
(
V
GE
15V,
T
j
150
°
C)
I
c
I
c
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