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參數(shù)資料
| 型號(hào)： | IGW40T120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss IGBT in Trench and Fieldstop technology |
| 中文描述： | 在戴低損失和場(chǎng)終止IGBT技術(shù) |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 419K |
| 代理商： | IGW40T120 |
IGW40T120
^
TrenchStop Series
Power Semiconductors
3
Preliminary / Rev. 1 Jul-02
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
2500
130
110
203
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=40A
V
GE
=15V
TO-247AC
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
-
13
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
= 600V,
T
j
= 25
°
C
-
210
-
A
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
48
34
480
70
3.3
3.2
6.5
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=600V,
I
C
=40A,
V
GE
=0/15V,
R
G
=15
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=39pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
52
40
580
120
5.0
5.4
10.4
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=600V,
I
C
=40A,
V
GE
=0/15V,
R
G
= 15
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=39pF
mJ
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IGW40T120_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in TrenchStop and Fieldstop technology |
| IGW40T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 75A 270W TO247-3 |
| IGW50N60H3 | 功能描述:IGBT 晶體管 600V 50A 333W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IGW50N60H3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 100A 333W TO247-3 |
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