參數(shù)資料
型號: IGW08T120
廠商: Electronic Theatre Controls, Inc.
英文描述: Low Loss IGBT in Trench and Fieldstop technology
中文描述: 在戴低損失和場終止IGBT技術(shù)
文件頁數(shù): 7/12頁
文件大?。?/td> 302K
代理商: IGW08T120
Preliminary
TrenchStoP Series
IGW08T120
Power Semiconductors
7
Preliminary / Rev. 1 Sep-03
E
,
S
5A
10A
15A
0,0mJ
2,0mJ
4,0mJ
6,0mJ
E
ts
*
E
off
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
E
off
E
,
S
5
50
R
G
,
GATE RESISTOR
100
150
200
0,0 mJ
0,4 mJ
0,8 mJ
1,2 mJ
1,6 mJ
2,0 mJ
2,4 mJ
2,8 mJ
3,2 mJ
E
ts
*
E
on
*
*)
E
and
E
include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
R
G
=81
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
I
C
=8A,
Dynamic test circuit in Figure E)
E
,
S
50°C
100°C
150°C
0,0mJ
0,5mJ
1,0mJ
1,5mJ
2,0mJ
2,5mJ
E
ts
*
E
on
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
400V
500V
600V
700V
800V
0mJ
1mJ
2mJ
3mJ
E
ts
*
E
on
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
on
*
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=8A,
R
G
=81
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
=150°C,
V
GE
=0/15V,
I
C
=25A,
R
G
=22
,
Dynamic test circuit in Figure E)
E
on
*
E
off
E
on
*
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