參數(shù)資料
型號: IGP03N120H2
廠商: INFINEON TECHNOLOGIES AG
英文描述: HighSpeed 2-Technology
中文描述: 高速2 -技術(shù)
文件頁數(shù): 8/13頁
文件大?。?/td> 397K
代理商: IGP03N120H2
IGP03N120H2,
IGW03N120H2
IGB03N120H2
Power Semiconductors
8
Rev. 2, Mar-04
V
G
,
G
-
E
1μs
10μs
100μs
1ms
10ms
100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
V
G
,
G
-
E
0nC
10nC
20nC
30nC
0V
5V
10V
15V
20V
U
CE
=240V
U
CE
=960V
Q
,
GATE CHARGE
Q
,
GATE CHARGE
Figure 17. Typical gate charge
(
I
C
= 3A)
Figure 17. Typical gate charge
(
I
C
= 3A)
C
,
C
0V
10V
20V
30V
10pF
100pF
1nF
C
rss
C
oss
C
iss
V
C
,
C
-
E
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0V
200V
400V
600V
800V
1000V
0A
1A
2A
3A
I
C
C
C
U
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
t
p
,
PULSE WIDTH
Figure 20. Typical turn off behavior, hard
switching
(V
GE
=15/0V,
R
G
=82
,
T
j
= 150
°
C,
Dynamic test circuit in Figure E)
R
,(K/W )
1.082517
0.328671
0.588811
τ
,
(s)
0.000795
0.000179
0.004631
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
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