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參數(shù)資料
| 型號： | ICSSSTUAH32868AHLF |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | 28-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2 |
| 中文描述： | 28位可配置注冊緩沖內(nèi)存 |
| 文件頁數(shù)： | 10/22頁 |
| 文件大?。?/td> | 468K |
| 代理商： | ICSSSTUAH32868AHLF |
ICSSSTUAH32868A
28-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2
COMMERCIAL TEMPERATURE GRADE
28-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2
10
ICSSSTUAH32868A
7115/9
Absolute Maximum Ratings
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Output Buffer Characteristics
Output edge rates over recommended operating free-air temperature range
Item
Rating
Supply Voltage, V
DD
Input Voltage Range, V
I1
Output Voltage Range, V
O1,2
Input Clamp Current, I
IK
Output Clamp Current, I
OK
Continuous Output Clamp Current, I
O
Continuous Current through each V
DD
or GND
-0.5V to 2.5V
-0.5V to V
DD
+ 2.5V
-0.5V to V
DDQ
+ 0.5V
±50mA
±50mA
±50mA
±100mA
40.4
°
C/W
29.1
°
C/W
-65 to +150
°
C
1
O/P clamp current are observed.
2
This current will flow only when the output is in the high state level V
O
> V
DDQ
.
3
The package thermal impedance is calculated in accordance with JESD 51.
The input and output negative voltage ratings may be exceeded if the ratings of the I/P and
Package Thermal Impedance (
θ
ja)
3
0m/s Airflow
1m/s Airflow
Storage Temperature
Parameter
dV/dt_r
dV/dt_f
dV/dt_
Δ
1
V
DD
= 1.8V ± 0.1V
Min.
1
1
Units
V/ns
V/ns
V/ns
Max.
4
4
1
1
Difference between dV/dt_r (rising edge rate) and dV/dt_f (falling edge rate).
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