參數(shù)資料
型號(hào): HYS64V32220GU-8
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
中文描述: 32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 7/16頁
文件大?。?/td> 263K
代理商: HYS64V32220GU-8
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
INFINEON Technologies
7
9.01
Operating Currents per memory bank
(TA = 0 to 70 oC; V
SS
= 0 V; V
DD
= 3.3 V ± 0.3 V)
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
Symb.
-7/-7.5
-8
Note
OPERATING CURRENT
trc=trcmin.,
All banks operated in random access,
all banks operated in ping-pong manner
ICC1
920
680
mA
1, 2
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
tck = min.
ICC2P
8
mA
1
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
tck = min.
ICC2N
160
120
mA
1
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
CKE>=VIH(min.)
ICC3N
200
180
mA
1
CKE<=VIL(max.)
ICC3P
40
mA
1
BURST OPERATING CURRENT
tck = min.,
Read command cycling
ICC4
600
400
mA
1,2
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
ICC5
960
880
mA
1
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V,
tck = infinity.
ICC6
7.2
mA
1
Notes:
1. These parameters depend on the cycle rate. These values are measured at 133 MHz for -7 & -7.5
and at 100 MHz for -8 modules. Input signals are changed once during tck.
2. These parameters are measured with continuous data stream during read access and all DQ toggling.
CL=3 and BL=4 is assumed and the data-out current is excluded.
相關(guān)PDF資料
PDF描述
HYS64V16200GU-8 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HYS64V32300GU-7.5-C2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module