參數(shù)資料
型號: HYS64V16200GU-8B
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
中文描述: 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 1/16頁
文件大?。?/td> 263K
代理商: HYS64V16200GU-8B
INFINEON Technologies
1
9.01
144 pin SO-DIMM SDRAM Modules
128MB & 256 MB PC100 / PC133
HYS64V16200GDL
HYS64V32220GDL
144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules
for PC100 and PC133 notebook applications
One bank 16M x 64 (128MByte) and two banks 32M x 64 (256 MByte)
non-parity module organisation
Performance:
Single +3.3V(± 0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
256Mbit SDRAM low power components in TSOP54 packages with 16M x 16 organisation
8192 refresh cycles every 64 ms
Gold contact pad, JEDEC MO-190 outline dimensions
This module family is fully compliant with the latest INTEL SO-DIMM layout and electrical
specifications
All PC133 modules are fully backward compatible to PC100-222 operation
Importante Notice
:
These SO-DIMM modules are based on 256Mbit SDRAM technology and can be
used in applications only, where 256Mbit addressing is supported.
-7
-7.5
-8
PC133
2-2-2
PC133
3-3-3
PC100
2-2-2
Units
f
CK
Clock frequency (max.)
133
133
100
MHz
t
AC
Clock access time
5.4
5.4
6
ns
相關(guān)PDF資料
PDF描述
HYS64V32220GU-8B 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
HYS64V32300GU-7.5-D SDRAM|32MX64|CMOS|DIMM|168PIN|PLASTIC
HYS64V32300GU 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
HYS64V32300GU-75-C2 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
HYS64V32300GU-75-D 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
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