參數(shù)資料
型號(hào): HYS64V32220GU-8
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
中文描述: 32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
封裝: DIMM-168
文件頁(yè)數(shù): 6/16頁(yè)
文件大?。?/td> 263K
代理商: HYS64V32220GU-8
144 pin SO-DIMM SDRAM Modules
HYS64V16200GDL/HYS64V32220GDL
INFINEON Technologies
6
9.01
Absolute Maximum Ratings
DC Characteristics
T
A
= 0 to 70
o
C;
V
SS
= 0 V;
V
DD
= 3.3 V ± 0.3 V
Capacitance
T
A
= 0 to 70
o
C;
V
DD
= 3.3 V ± 0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to V
SS
Power supply voltage on V
DD
Storage temperature range
V
IN,
V
OUT
V
DD
T
STG
P
D
I
OS
– 1.0
4.6
V
– 1.0
4.6
V
-55
+150
o
C
Power dissipation (per SDRAM component)
1
W
Data out current (short circuit)
50
mA
Permanent device damage may occur if
Absolute Maximum Ratings
are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Parameter
Symbol
Limit Values
Unit
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
Vcc+0.3
V
Input low voltage
0.5
0.8
V
Output high voltage (
I
OUT
=
4.0 mA)
Output low voltage (
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V <
V
IN
< 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
2.4
V
0.4
V
20
20
mA
I
O(L)
20
20
mA
Parameter
Symbol
Limit Values
Unit
16M x 64
max.
32M x 64
max.
Input capacitance (A0 to A11, BA0, BA1)
C
I1
C
I2
C
I3
C
I4
C
I5
C
IO
C
sc
C
sd
28
52
pF
Input capacitance (RAS, CAS, WE, CKE0)
25
46
pF
Input Capacitance (CLK0, CLK1)
35
35
pF
Input capacitance (CS0)
25
30
pF
Input capacitance (DQMB0-DQMB7)
10
15
pF
Input / Output capacitance (DQ0-DQ63)
12
18
pF
Input Capacitance (SCL,SA0-2)
8
8
pF
Input/Output Capacitance
10
10
pF
相關(guān)PDF資料
PDF描述
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參數(shù)描述
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