參數(shù)資料
型號: HYE25L128160AC-8
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
中文描述: 128 - Mbit同步低功率DRAM在CHIPSIZE套票
文件頁數(shù): 16/50頁
文件大小: 980K
代理商: HYE25L128160AC-8
HYB/E 25L128160AC
128-MBit Mobile-RAM
INFINEON Technologies
16
2003-02
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3. These parameters depend on the frequency. These values are measured at 133 MHz for -7 &
-7.5 and at 100 MHz for -8 parts. Input signals are changed once during
W
. If the devices are
operating at a frequency less than the maximum operation frequency, these current values are
multiplied by 1/ freq, meaning operation at half the maximum frequency reduces these current
value by a factor of 2.
4. These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 is assumed and the
9
DDQ
current is excluded.
Parameter & Test Condition
Extended Mode
Register M[4:3]
Tcase [
o
C]
85
o
C max.
70
o
C max.
45
o
C max.
15
o
C max.
85
o
C max.
70
o
C max.
45
o
C max.
15
o
C max.
85
o
C max.
70
o
C max.
45
o
C max.
15
o
C max.
Symb. max.
Unit
Note
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity,
full array activations, all banks
I
CC6
520
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
350
250
210
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity,
half array activations, Bank 0 +1
I
CC6
380
250
180
160
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity,
quarter array activation, Bank 0
I
CC6
270
180
130
120
相關(guān)PDF資料
PDF描述
HYB25L128160AC-7.5 HEX DIE SET,.052/.068/.100/.21
HYE25L128160AC-7.5 HEX DIE SET,.052/.068/.178/.25
HYE25L128160AC-75 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
HYB25L512160AC-75 512MBit Mobile-RAM
HYB25L512160AC-7.5 BJAWBMSpecialty DRAMs Mobile-RAM
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參數(shù)描述
HYE25L256160AC 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-Mbit Mobile-RAM
HYE25L256160AC-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYE25L256160AC-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-Mbit Mobile-RAM