參數(shù)資料
型號(hào): HYB5116400BT-50
廠商: SIEMENS A G
元件分類(lèi): DRAM
英文描述: 4M x 4-Bit Dynamic RAM
中文描述: 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
封裝: 0.300 INCH, PLASTIC, TSOP2-24
文件頁(yè)數(shù): 9/26頁(yè)
文件大小: 325K
代理商: HYB5116400BT-50
Semiconductor Group
9
HYB 5116400BJ/BT-50/-60/-70
4M x 4-DRAM
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle
time
t
PRWC
71
80
95
ns
CAS precharge to WE
t
CPWD
48
55
65
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
10
10
10
ns
CAS hold time
10
10
10
ns
RAS to CAS precharge time
5
5
5
ns
Write to RAS precharge time
10
10
10
ns
Write hold time referenced to RAS
t
WRH
10
10
10
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
40
40
ns
Test Mode
CAS hold time
t
CHRT
t
WTS
t
WTH
30
30
30
ns
Write command setup time
10
10
10
ns
Write command hold time
10
10
10
ns
Self Refresh Cycle
RAS pulse width
t
RASS
t
RPS
t
CHS
100k
100k
100k
ns
17
RAS precharge time
95
110
130
ns
17
CAS hold time
-50
-50
-50
ns
17
AC Characteristics
(cont’d)
5)6)
16F
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
相關(guān)PDF資料
PDF描述
HYB5116400BT-60 4M x 4-Bit Dynamic RAM
HYB5116400BT-70 4M x 4-Bit Dynamic RAM
HYB5116405BT-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117405BT-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BT-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB5116400BT-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM
HYB5116400BT-70 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM
HYB5116405BJ-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-50- 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh