參數(shù)資料
型號(hào): HYB5116400BT-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 4-Bit Dynamic RAM
中文描述: 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
封裝: 0.300 INCH, PLASTIC, TSOP2-24
文件頁(yè)數(shù): 1/26頁(yè)
文件大?。?/td> 325K
代理商: HYB5116400BT-60
Semiconductor Group 1 1.96
4 194 304 words by 4-bit organization
0 to 70 °C operating temperature
Performance:
Single + 5 V (
±
10 %) supply
Low power dissipation
max. 550 active mW (-50 version)
max. 495 active mW (-60 version)
max. 440 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
Fast page mode capability
All inputs, outputs and clocks fully TTL-compatible
4096 refresh cycles / 64 ms
Plastic Package:
P-SOJ-26/24 300 mil
P TSOPII-26/24 300 mil
-50
-60
-70
tRAC
tCAC
tAA
tRC
tPC
RAS access time
50
60
70
ns
CAS access time
13
15
20
ns
Access time from address
25
30
35
ns
Read/Write cycle time
90
110
130
ns
Fast page mode cycle time
35
40
45
ns
4M x 4-Bit Dynamic RAM
Advanced Information
HYB5116400BJ -50/-60/-70
HYB5116400BT -50/-60/-70
相關(guān)PDF資料
PDF描述
HYB5116400BT-70 4M x 4-Bit Dynamic RAM
HYB5116405BT-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117405BT-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BT-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJBT-50- 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB5116400BT-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM
HYB5116405BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5116405BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh