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參數(shù)資料
| 型號： | HYB511000BJ-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| 中文描述： | 1M X 1 FAST PAGE DRAM, 70 ns, PDSO20 |
| 文件頁數(shù)： | 8/22頁 |
| 文件大?。?/td> | 192K |
| 代理商： | HYB511000BJ-70 |
Semiconductor Group
40
HYB 511000BJ/BJL-50/-60/-70
1 M
×
1-DRAM
RAS to column address
delay time
12)
t
RAD
15
25
15
30
15
35
ns
CAS to RAS precharge
time
t
CRP
5
–
5
–
5
–
ns
CAS precharge time (fast
page mode)
t
CP
10
–
10
–
10
–
ns
Row address
setup time
t
ASR
0
–
0
–
0
–
ns
Row address
hold time
t
RAH
10
–
10
–
10
–
ns
Column address setup
time
t
ASC
0
–
0
–
0
–
ns
Column address hold
time
t
CAH
15
–
15
–
15
–
ns
Column address to RAS
lead time
t
RAL
25
–
30
–
35
–
ns
Read command setup
time
t
RCS
0
–
0
–
0
–
ns
Read command hold
time
8)
t
RCH
0
–
0
–
0
–
ns
Read command hold time
referenced to RAS
Write command hold time
t
WCH
Write command pulse
width
8)
t
RRH
0
–
0
–
0
–
ns
10
–
10
–
15
–
ns
t
WP
10
–
10
–
15
–
ns
Write command to RAS
lead time
t
RWL
15
–
15
–
20
–
ns
Write command to CAS
lead time
t
CWL
15
–
15
–
20
–
ns
Data setup time
9)
t
DS
9)
t
DH
0
–
0
–
0
–
ns
Data hold time
10
–
15
–
15
–
ns
Refresh period
t
REF
t
REF
–
8
–
8
–
8
ms
Refresh period for
L-version only
–
64
–
64
–
64
ms
AC Characteristics
(cont’d)
4) 13)
T
A
= 0 to 70 C;
V
CC
= 5 V
±
10 %;
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
-50
-60
-70
min.
max.
min.
max.
min.
max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB511000BJL-50 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-60 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJ- | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-70 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB5116400BJ-50 | 4M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB511000BJ-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
| HYB511000BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BL-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
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